**Title: Revolutionary Advancements in Cubic Boron Arsenide Semiconductor: Fully Funded EPSRC and Swansea PhD Scholarship**

**Introduction**

In the realm of electronic and electrical engineering, a groundbreaking innovation has emerged that holds the potential to reshape semiconductor technology. Cubic boron arsenide (c-BAs), a remarkable semiconductor, has demonstrated extraordinary electron and hole mobility, coupled with an impressive thermal conductivity. This article delves into the exceptional properties of c-BAs, its applications in various fields, and an exclusive opportunity for aspiring scholars to pursue a fully funded EPSRC and Swansea PhD Scholarship in Electronic and Electrical Engineering.

**Unveiling the Marvel: Cubic Boron Arsenide Semiconductor**

Cubic boron arsenide (c-BAs) has garnered considerable attention due to its revolutionary properties. At room temperature, it exhibits an electron mobility of 1400 cm²/Vs, on par with traditional silicon. However, its hole mobility stands out, boasting about 2100 cm²/Vs, a stark contrast to silicon’s 450 cm²/Vs. Furthermore, c-BAs showcases an exceptional thermal conductivity ranging from 1000 to 1300 W/mK, outperforming silicon’s 140 W/mK. These unparalleled transport characteristics open doors for advancements in digital technology, radio-frequency applications, mobile computing, and photovoltaic systems, particularly in solar cells.

**Eligibility Criteria**

Aspiring candidates are required to possess an undergraduate degree at a 2.1 level (or equivalent as per Swansea University’s guidelines) in Engineering or a related scientific discipline. For international applicants, an IELTS score of 6.5 overall, with a minimum of 5.5 in each component, or an equivalent Swansea-recognized qualification is mandatory. This scholarship is exclusively available for applicants eligible to pay UK tuition fees, as defined by UKCISA regulations. Non-UK degree holders are encouraged to consult Swansea University’s degree comparisons to determine eligibility.

**Comprehensive Scholarship Benefits**

The chosen candidate will be bestowed with a comprehensive scholarship package. This package includes coverage for the entire cost of UK tuition fees and an annual stipend at the prevailing UKRI rate, which currently stands at £18,622 for the academic year 2023/24. Furthermore, recipients of the scholarship will have access to additional research funding, facilitating their pursuit of cutting-edge research in the field of Electronic and Electrical Engineering.

**Application Process**

Prospective applicants can seamlessly apply for this prestigious scholarship opportunity by following these steps:

1. Choose the course: Select ‘Electronic and Electrical Engineering / PhD / Full-time / 3 Year / October’ as your course of choice.

2. Indicate the start year: Choose ‘2023’ as your intended start year.

3. Funding section (page 8): In response to ‘Are you funding your studies yourself?’ select ‘No.’ Under ‘Name of Individual or organisation providing funds for study,’ enter ‘RS416 – PhD Elec Eng**’**.

It is imperative to accurately provide the above information while submitting the application. Any omission may result in the application not being considered for the scholarship award. Kindly note that each applicant can only apply for a single Swansea University-led research scholarship award to ensure a fair selection process.

**Conclusion**

In conclusion, the emergence of cubic boron arsenide (c-BAs) as a revolutionary semiconductor has set the stage for transformative advancements in electronic and electrical engineering. Its unparalleled electron and hole mobility, coupled with remarkable thermal conductivity, positions it as a frontrunner in various applications. Aspiring scholars have the unique opportunity to explore the potential of c-BAs through the fully funded EPSRC and Swansea PhD Scholarship in Electronic and Electrical Engineering. This scholarship not only covers tuition fees but also offers a generous stipend and research expenses, enabling scholars to contribute to cutting-edge research and innovation in this dynamic field.

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